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MRF5S21090L Datasheet, PDF (2/12 Pages) Motorola, Inc – RF Power Field Effect Transistors
Freescale Semiconductor, Inc.
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
1 (Minimum)
M3 (Minimum)
C7 (Minimum)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
—
—
10
µAdc
IDSS
—
—
1
µAdc
IGSS
—
—
1
µAdc
ON CHARACTERISTICS (DC)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 µAdc)
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 850 mAdc)
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 2 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
VGS(th)
2.5
2.9
3.5
Vdc
VGS(Q)
—
3.9
—
Vdc
VDS(on)
—
0.25
—
Vdc
gfs
—
5
—
S
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.7
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and
IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Common- Source Amplifier Power Gain
Gps
12.5
14.5
—
dB
(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 850 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Drain Efficiency
η
24
26
—
%
(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 850 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
3rd Order Intermodulation Distortion
IM3
—
- 37.5
- 35
dBc
(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 850 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3
measured over 3.84 MHz BW at f1 - 10 MHz and f2 +10 MHz
referenced to carrier channel power.)
Adjacent Channel Power Ratio
ACPR
—
- 40.5
- 38
dBc
(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 850 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR
measured over 3.84 MHz at f1 - 5 MHz and f2 +5 MHz.)
Input Return Loss
IRL
—
- 15
-9
dB
(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 850 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
(1) Part is internally matched both on input and output.
MRF5S21090LR3 MRF5S21090LSR3
MOTOROLA RF DEVICE DATA
2
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