MRF555 Datasheet, PDF (2/6 Pages) Motorola, Inc – RF LOW POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS (f = 470 MHz)
Common–Emitter Power Gain
(VCC = 12.5 Vdc, Pout = 1.5 W)
Gpe
11
12.5
—
dB
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 1.5 W)
η_c
50
60
—
%
Load Mismatch Stress
(VCC = 15.5 Vdc, Pin = 125 mW,
VSWR ≥ 10:1 all phase angles)
ψ
No Degradation in Output Power
RF
POWER
INPUT
B
L1
L2
Z1
Z2
C1
C4
C2 _C3
C7
L3
D.U.T.
L5
+
B
C8
+
C9
VCC
–
L4
C5
Z3
C6
RF
POWER
OUTPUT
*C1, C3, C6 — 0.8 – 11 pF Johanson
C2 — 15 pF Clamped Mica, Mini–Underwood
C4 — 36 pF Clamped Mica, Mini–Underwood
C5 — 470 pF Ceramic Chip Capacitor
C7 — 91 pF Clamped Mica, Mini–Underwood
C8 — 68 pF Clamped Mica, Mini–Underwood
C9 — 1.0 µF, 25 V Tantalum
B — Bead, Ferroxcube 56–590–65/3B
*Fixed tuned for broadband response
L1 — 5 Turns #21 AWG, 5/32″ I.D.
L2, L3 — 60 x 125 x 250 Mils Copper Pad on 27 Mil Thick
L2, L3 — Alumina Substrate
L4, L5 — 7 Turns #21 AWG 5/32″ I.D.
Z1 — 1.29″ x 0.16″ Microstrip
Z2 — 0.70″ x 0.16″ Microstrip
Z3 — 2.18″ x 0.16″ Microstrip
PCB — 1/16″ Glass Teflon, 1 oz. cu. clad,
PCB — double sided, ε_r = 2.5
Figure 1. 400 – 512 MHz Broadband Circuit
MRF555
2
20
Pout = 1.5 W
VCC = 12.5 Vdc
16
Gpe
12
65
η_c
60
8
55
4
IRL
10
15
0
20
400
425
450
475
500
525
f, FREQUENCY (MHz)
Figure 2. Performance in Broadband Circuit
MOTOROLA RF DEVICE DATA