MRF5015 Datasheet, PDF (2/8 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER FET

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 10 mAdc)
VGS(th)
1.25
2.3
3.5
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
—
0.375
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1 Adc )
gfs
1.2
—
—
S
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
33
—
pF
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Coss
—
74
—
pF
Reverse Transfer Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Crss
7
8.8
10.8
pF
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(VDD = 12.5 Vdc, Pout = 15 W,
IDQ = 100 mA)
Gps
f = 512 MHz
f = 175 MHz
Drain Efficiency
(VDD = 12.5 Vdc, Pout = 15 W,
IDQ = 100 mA)
η
f = 512 MHz
f = 175 MHz
Load Mismatch
ψ
(VDD = 15.5 Vdc, 2 dB Overdrive, f = 512 MHz,
Load VSWR = 20:1, All Phase Angles at Frequency of Test)
dB
10
11.5
—
—
15
—
%
50
55
—
—
55
—
No Degradation in Output Power
R1
VGG
+
R2
C1
C2
RF ^{N1 Z1 C4 Z2}
Input
C5
Z4
R3
Z3
Z5 C6
B1
C3
L1
Z6
C7
Socket
DUT
Z7
Z8
+
VDD
B1 ^C12
C13
C11
L2
Z9
C8
Z10 C10 Z11 ^N2 _RF
Output
C9
B1, B2
C1, C13
C2, C12
C3, C4, C10, C11
C5, C9
C6
C7
C8
L1, L2
N1, N2
R1
R2
Ferrite Bead, Fair Rite Products
10 µF, 50 V, Electrolytic
0.1 µF, Chip Capacitor
120 pF, Chip Capacitor
0 to 20 pF, Trimmer Capacitor
36 pF, Chip Capacitor
43 pF, Chip Capacitor
30 pF, Chip Capacitor
7 Turns, 24 AWG 0.116″ ID
Type N Flange Mount
1 kΩ, 1/4 W, Carbon
470 kΩ, 1/4 W, Carbon
R3
Z1, Z11
Z2
Z3
Z4
Z5
Z6
Z7, Z8
Z9
Z10
Board
160 Ω, 0.1 W Chip
Transmission Line*
Transmission Line*
Transmission Line*
Transmission Line*
Transmission Line*
Transmission Line*
Transmission Line+
Transmission Line*
Transmission Line*
Glass Teflon® 0.060″
+ Part of Capacitor Mount Socket
*See Photomaster
Figure 1. 512 MHz Narrowband Test Circuit Electrical Schematic
MRF5015
2
MOTOROLA RF DEVICE DATA