MRF422 Datasheet, PDF (2/4 Pages) Motorola, Inc – RF POWER TRANSISTORS NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 Adc, VCE = 5.0 Vdc)
hFE
15
30
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
420
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 28 Vdc, Pout = 150 W (PEP), IC(max) = 6.7 Adc,
ICQ = 150 mAdc, f = 30, 30.001 MHz)
Collector Efficiency
(VCC = 28 Vdc, Pout = 150 W (PEP), IC(max) = 6.7 Adc,
ICQ = 150 mAdc, f = 30, 30.001 MHz)
GPE
10
13
η
—
45
Intermodulation Distortion (1)
(VCE = 28 Vdc, Pout = 150 W (PEP), IC = 6.7 Adc,
ICQ = 150 mAdc, f = 30, 30.001 MHz)
IMD
—
– 33
Output Power
(VCE = 28 Vdc, f = 30 MHz)
Pout
150
—
NOTE:
1. To Mil–Std–1311 Version A, Test Method 2204, Two Tone, Reference each Tone.
Max
Unit
120
—
—
pF
—
dB
—
%
– 30
dB
—
Watts
(PEP)
R1
+
BIAS
CR1
C6
–
C2
C7
L2
L1
C1
R2
L5
C8
C9
L3
D.U.T.
L4
C4
C3
C10
C11
+
28 Vdc
–
C5
C1, C2, C3, C5 — 170– 680 pF, ARCO 469
C4 — 80 – 480 pF, ARCO 466
C6, C8, C11 — ERIE 0.1 µF, 100 V
C7 — MALLORY 500 µF, 15 V Electrolytic
C9 — UNDERWOOD 1000 pF, 350 V
C10 — 10 µF, 50 V Electrolytic
R1 — 10 Ω, 25 Watt Wire Wound
R2 — 10 Ω, 1.0 Watt Carbon
CR1 — 1N4997
L1 — 3 Turns, #16 Wire, 5/16″ I.D., 5/16″ Long
L2 — 10 µH Molded Choke
L3 — 12 Turns, #16 Enameled Wire, Close Wound, 1/4″ Dia.
L4 — 5 Turns, 1/8″ Copper Tubing
L5 — 10 Ferrite Beads — FERROXCUBE #56–590–65/3B
Figure 1. 30 MHz Test Circuit Schematic
MRF422
2
MOTOROLA RF DEVICE DATA