MRF373A Datasheet, PDF(2/8 Page) Motorola, Inc – RF Power Field Effect Transistors

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MRF373A Datasheet, PDF (2/8 Pages) Motorola, Inc – RF Power Field Effect Transistors

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Freescale Semiconductor, Inc.

ELECTRICAL CHARACTERISTICS (TC = 25Â°C unless otherwise noted)

Characteristic

Symbol

OFF CHARACTERISTICS

Drain - Source Breakdown Voltage

(VGS = 0 Vdc, ID =1 ÂµA)

V(BR)DSS

Zero Gate Voltage Drain Current

(VDS = 32 Vdc, VGS = 0 Vdc)

IDSS

Gate - Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 V, ID = 200 ÂµA)

VGS(th)

Gate Quiescent Voltage

(VDS = 32 V, ID = 100 mA)

VGS(Q)

Drain - Source On - Voltage

(VGS = 10 V, ID = 3 A)

VDS(on)

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

(VDS = 32 V, VGS = 0, f = 1 MHz)

Output Capacitance

(VDS = 32 V, VGS = 0, f = 1 MHz)

Coss

Reverse Transfer Capacitance

Crss

(VDS = 32 V, VGS = 0, f = 1 MHz)

FUNCTIONAL CHARACTERISTICS (50 ohm system)

Common Source Power Gain

Gps

(VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz)

Drain Efficiency

Î·

(VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz)

Load Mismatch

(VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz,

Load VSWR at 10:1 at All Phase Angles)

Min

Typ

Max

Unit

Vdc

ÂµAdc

2.9

Vdc

2.5

3.3

4.5

Vdc

0.41

0.45

Vdc

98.5

16.5

18.2

No Degradation in Output Power

MRF373ALR1 MRF373ALSR1

MOTOROLA RF DEVICE DATA

For More Information On This Product,

Go to: www.freescale.com

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