MRF329 Datasheet, PDF (2/6 Pages) Motorola, Inc – BROADBAND RF POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (continued)
Collector–Base Breakdown Voltage
(IC = 80 mAdc, IE = 0)
V(BR)CBO
60
—
—
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
—
—
5.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 4.0 Adc, VCE = 5.0 Vdc)
hFE
20
—
80
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
95
125
pF
FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
(VCC = 28 Vdc, Pout = 100 W, f = 400 MHz)
GPE
7.0
9.7
—
dB
Collector Efficiency
(VCC = 28 Vdc, Pout = 100 W, f = 400 MHz)
η
50
60
—
%
Load Mismatch
(VCC = 28 Vdc, Pout = 100 W, f = 400 MHz,
VSWR = 3:1 all angles)
ψ
No Degradation in Output Power
RF
INPUT
L3
C12
+
28 Vdc
C13
–
C14
L1
L2
DUT
Z1
C10
Z2
RF
OUTPUT
C1
C2
C3
C4
C5
C6 C7
C8
C9
C11
C1, C2, C7, C9 — 1.0 – 20 pF Johanson (JMC 5501)
C3, C4 — 36 pF 100 mil Chip Cap (ATC)
C5, C6 — 50 pF 100 mil Chip Cap (ATC)
C8 — 30 pF 100 mil Chip Cap (ATC)
C10 — 2.0 – 150 pF 100 mil Chip Caps in Parallel (ATC)
C11 — 1.0 – 10 pF Johanson (JMC 5201)
C12, C13 — 1000 pF UNELCO Feedthru
C14 — 0.1 µF Erie Redcap
L1 — 0.15 µH Molded Choke with Ferrite Bead
L1 — (Ferroxcube #56–590–65/4B) on Ground End
L2 — 4 Turns #18 AWG, 1/4″ ID
L3 — Ferroxcube VK200–19/4B
Z1 — Microstrip Line 2300 mils L x 210 mils W
Z2 — Microstrip Line 2300 mils L x 280 mils W
Board — Glass Teflon, t = 0.062″, ε_r = 2.56
Figure 1. 400 MHz Test Circuit
MRF329
2
MOTOROLA RF DEVICE DATA