MRF286 Datasheet, PDF (2/8 Pages) Motorola, Inc – The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 20 µAdc)
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0)
V(BR)DSS
IGSS
IDSS
ON CHARACTERISTICS
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
Gate Threshold Voltage
(VDS = 10 V, ID = 300 µA)
Gate Quiescent Voltage
(VDS = 26 V, ID = 500 mA)
Drain–Source On–Voltage
(VGS = 10 V, ID = 1 A)
gfs
VGS(th)
VGS(Q)
VDS(on)
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Input Capacitance(1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss
Ciss
Coss
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain
Gps
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Drain Efficiency
η
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Intermodulation Distortion
IMD
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Input Return Loss
IRL
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Output Mismatch Stress
Ψ
(VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA,
f = 2 GHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
(1) Part is internally matched both on input and output.
Min
Typ
Max
Unit
65
—
—
Vdc
—
—
1
µAdc
—
—
10
µAdc
—
3
—
S
2
3.2
4
Vdc
3
4.15
5
Vdc
—
0.16
0.6
Vdc
—
3
—
pF
—
145
—
pF
—
51
—
pF
9.5
10.5
—
dB
28
32
—
%
—
30
–28
dBc
—
–12
–9
dB
No Degradation In Output Power
MRF286 MRF286S
2
MOTOROLA RF DEVICE DATA