MRF19090 Datasheet, PDF (2/8 Pages) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTORS

ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 100 µA)
Zero Gate Voltage Drain Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate–Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
ON CHARACTERISTICS
Forward Transconductance
(V_DS = 10 Vdc, I_D = 3 Adc)
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 300 µAdc)
Gate Quiescent Voltage
(V_DS = 26 Vdc, I_D = 750 mAdc)
Drain–Source On–Voltage
(V_GS = 10 Vdc, I_D = 1 Adc)
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(V_DS = 26 Vdc, V_GS = 0, f = 1 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture)
Two–Tone Common–Source Amplifier Power Gain
(V_DD = 26 Vdc, P_out = 90 W PEP, I_DQ = 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
V_(BR)DSS
I_DSS
I_GSS
g_fs
VGS_(th)
V_GS(Q)
V_DS(on)
C_rss
G_ps
Two–Tone Drain Efficiency
η
(V_DD = 26 Vdc, P_out = 90 W PEP, I_DQ = 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
3rd Order Intermodulation Distortion
IMD
(V_DD = 26 Vdc, P_out = 90 W PEP, I_DQ = 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
Input Return Loss
IRL
(V_DD = 26 Vdc, P_out = 90 W PEP, I_DQ = 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
P_out, 1 dB Compression Point
(V_DD = 26 Vdc, P_out = 90 W CW, f = 1990 MHz)
Output Mismatch Stress
(V_DD = 26 Vdc, P_out = 90 W CW, I_DQ = 750 mA,
f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
P1dB
Ψ
(1) Part is internally matched both on input and output.
Min
Typ
Max
Unit
65
—
—
Vdc
—
—
10
µAdc
—
—
1
µAdc
—
7.2
—
S
2.0
—
4.0
Vdc
2.5
3.8
4.5
Vdc
—
0.10
—
Vdc
—
4.2
—
pF
10
11.5
—
dB
33
35
—
%
—
–30
–28
dBc
—
–12
—
dB
—
90
—
W
No Degradation In Output Power
Before and After Test
MRF19090 MRF19090S MRF19090SR3
2
MOTOROLA RF DEVICE DATA