MRF184R1 Datasheet, PDF (2/12 Pages) Motorola, Inc – N-Channel Enhancement-Mode Lateral MOSFETs

ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
ELECTRICAL CHARACTERISTICS – continued (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
ON CHARACTERISTICS
Gate Threshold Voltage
(V_DS = 10 V, I_D = 200 µA)
Gate Quiescent Voltage
(V_DS = 28 V, I_D = 100 mA)
Drain–Source On–Voltage
(V_GS = 10 V, I_D = 3 A)
Forward Transconductance
(V_DS = 10 V, I_D = 3 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
(V_DS = 28 V, V_GS = 0 V, f = 1 MHz)
Output Capacitance
(V_DS = 28 V, V_GS = 0 V, f = 1 MHz)
Reverse Transfer Capacitance
(V_DS = 28 V, V_GS = 0 V, f = 1 MHz)
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
(V_DD = 28 V, P_out = 60 W, f = 945 MHz, I_DQ = 100 mA)
Drain Efficiency
(V_DD = 28 V, P_out = 60 W, f = 945 MHz, I_DQ = 100 mA)
Load Mismatch
(V_DD = 28 V, P_out = 60 W, I_DQ = 100 mA, f = 945 MHz,
Load VSWR 5:1 at all Phase Angles)
V_GS(th)
2
3
4
V_GS(Q)
3
4
5
V_DS(on)
–
0.65
0.8
g_fs
2.2
2.6
–
C_iss
–
83
–
C_oss
–
44
–
C_rss
–
4.3
–
G_ps
11.5
13.5
–
η
53
60
–
ψ
No Degradation in Output Power
Unit
Vdc
Vdc
Vdc
s
pF
pF
pF
dB
%
R1
V_GG
R2
C6 C7
C8
C5
R3
C2
R4
C11
C9
B1
L1
C10
C12
V_DD
C13
RF
INPUT _C1
TL1
DUT
TL2
TL3
C4
TL4
RF
OUTPUT
C3
B1
C1
C2, C3, C6, C9
C4
C5, C12
C7, C10
C8, C11
C13
Short RF Bead Fair Rite–2743019447
18 pF Chip Capacitor
43 pF Chip Capacitor
100 pF Chip Capacitor
10 µF, 50 Vdc Electrolytic Capacitor
1000 pF Chip Capacitor
0.1 µF, 50 Vdc Chip Capacitor
250 µF, 50 Vdc Electrolytic Capacitor
L1
R1
R2
R3
R4
TL1–TL4
Ckt Board
5 Turns, 20 AWG, IDIA 0.126″
10 kΩ, 1/4 W Resistor
13 kΩ, 1/4 W Resistor
1.0 kΩ, 1/4 W Chip Resistor
4 x 39 Ω, 1/8 W Chip Resistor
Microstrip Line See Photomaster
1/32″ Glass Teflon, ε_r = 2.55
ARLON–GX–0300–55–22
Figure 1. MRF184 Test Circuit Schematic
MRF184R1 MRF184SR1
2
MOTOROLA RF DEVICE DATA
Archived 2005