MRF18090B Datasheet, PDF (2/8 Pages) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTORS

ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 100 µAdc)
Zero Gate Voltage Drain Current
(V_DS = 26 Vdc, V_GS = 0 Vdc)
Gate–Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
ON CHARACTERISTICS
Gate Quiescent Voltage
(V_DS = 26 Vdc, I_D = 750 mAdc)
Drain–Source On–Voltage
(V_GS = 10 Vdc, I_D = 1 Adc)
Forward Transconductance
(V_DS = 10 Vdc, I_D = 3 Adc)
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance
(V_DS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain @ 90 W (1)
(V_DD = 26 Vdc, I_DQ = 750 mA, f = 1930 – 1990 MHz)
Drain Efficiency @ 90 W (1)
(V_DD = 26 Vdc, I_DQ = 750 mA, f = 1930 – 1990 MHz)
Input Return Loss (1)
(V_DD = 26 Vdc, P_out = 90 W CW, I_DQ = 750 mA,
f = 1930 – 1990 MHz)
V_(BR)DSS
65
—
—
Vdc
I_DSS
—
—
10
µAdc
I_GSS
—
—
1
µAdc
V_GS(Q)
2.5
3.7
4.5
Vdc
V_DS(on)
—
0.1
—
Vdc
g_fs
—
7.2
—
S
C_rss
—
4.2
—
pF
G_ps
dB
12
13.5
—
η
%
40
45
—
IRL
dB
—
—
–10
Output Mismatch Stress
Ψ
No Degradation In Output Power
(V_DD = 26 Vdc, P_out = 90 W CW, I_DQ = 750 mA VSWR = 10:1,
All Phase Angles at Frequency of Tests)
Before and After Test
(1) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1900 band, ensuring batch–to–batch
consistency.
MRF18090B MRF18090BS
2
MOTOROLA RF DEVICE DATA