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MRF18090A Datasheet, PDF (2/8 Pages) Motorola, Inc – 1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS | |||
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainâSource Breakdown Voltage
(VGS = 0 Vdc, ID = 100 µAdc)
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
GateâSource Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 750 mAdc)
DrainâSource OnâVoltage
(VGS = 10 Vdc, ID = 1 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
FUNCTIONAL TESTS (In Motorola Test Fixture)
CommonâSource Amplifier Power Gain @ 90 W (1)
(VDD = 26 Vdc, IDQ = 750 mA, f = 1805 â 1880 MHz)
Drain Efficiency @ 90 W (1)
(VDD = 26 Vdc, IDQ = 750 mA, f = 1805 â 1880 MHz)
Input Return Loss (1)
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA,
f = 1805 â 1880 MHz)
V(BR)DSS
65
â
â
Vdc
IDSS
â
â
10
µAdc
IGSS
â
â
1
µAdc
VGS(Q)
2.5
3.7
4.5
Vdc
VDS(on)
â
0.1
â
Vdc
gfs
â
7.2
â
S
Crss
â
4.2
â
pF
Gps
dB
12.0
13.5
â
η
%
47
52
â
IRL
dB
â
â
â10
Output Mismatch Stress
Ψ
No Degradation In Output Power
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA VSWR = 10:1,
All Phase Angles at Frequency of Tests)
Before and After Test
(1) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1800 band, ensuring batchâtoâbatch
consistency.
MRF18090A MRF18090AS
2
MOTOROLA RF DEVICE DATA
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