MRF18060B Datasheet, PDF (2/8 Pages) Motorola, Inc – RF Power Field Effect Transistors

Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain - Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 10 µAdc)
Zero Gate Voltage Drain Current
(V_DS = 26 Vdc, V_GS = 0 Vdc)
Gate - Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
V_(BR)DSS
65
—
—
Vdc
I_DSS
—
—
6
µAdc
I_GSS
—
—
1
µAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 300 µAdc)
Gate Quiescent Voltage
(V_DS = 26 Vdc, I_D = 500 mAdc)
Drain - Source On - Voltage
(V_GS = 10 Vdc, I_D = 2 Adc)
Forward Transconductance
(V_DS = 10 Vdc, I_D = 2 Adc)
V_GS(th)
2
—
4
Vdc
V_GS(Q)
2.5
3.9
4.5
Vdc
V_DS(on)
—
0.27
—
Vdc
g_fs
—
4.7
—
S
DYNAMIC CHARACTERISTICS
Input Capacitance (Including Input Matching Capacitor in Package) (1)
C_iss
—
160
—
pF
(V_DS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Output Capacitance (1)
(V_DS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_oss
—
740
—
pF
Reverse Transfer Capacitance
(V_DS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_rss
—
2.7
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Common - Source Amplifier Power Gain @ 60 W (2)
(V_DD = 26 Vdc, I_DQ = 500 mA, f = 1930 - 1990 MHz)
Drain Efficiency @ 60 W (2)
(V_DD = 26 Vdc, I_DQ = 500 mA, f = 1930 - 1990 MHz)
Input Return Loss (2)
(V_DD = 26 Vdc, P_out = 60 W CW, I_DQ = 500 mA,
f = 1930 - 1990 MHz)
G_ps
dB
11.5
13
—
η
%
40
45
—
IRL
dB
—
—
- 10
Output Mismatch Stress
(V_DD = 26 Vdc, P_out = 60 W CW, I_DQ = 500 mA VSWR = 10:1,
All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
(2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1900 band, ensuring batch - to - batch
consistency.
MRF18060BR3 MRF18060BSR3 MRF18060BLSR3
MOTOROLA RF DEVICE DATA
2
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