MRF18060A Datasheet, PDF (2/8 Pages) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTORS

ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 10 µAdc)
V_(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(V_DS = 26 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
6
µAdc
Gate–Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_GSS
—
—
1
µAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 300 µAdc)
V_GS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(V_DS = 26 Vdc, I_D = 500 mAdc)
V_GS(Q)
2.5
3.9
4.5
Vdc
Drain–Source On–Voltage
(V_GS = 10 Vdc, I_D = 2 Adc)
V_DS(on)
—
0.27
—
Vdc
Forward Transconductance
(V_DS = 10 Vdc, I_D = 2 Adc)
g_fs
—
4.7
—
S
DYNAMIC CHARACTERISTICS
Input Capacitance (Including Input Matching Capacitor in Package) (1)
C_iss
—
160
—
pF
(V_DS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Output Capacitance (1)
(V_DS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_oss
—
740
—
pF
Reverse Transfer Capacitance
(V_DS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_rss
—
2.7
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Common–Source Amplifier Power Gain @ 60 W (2)
(V_DD = 26 Vdc, I_DQ = 500 mA, f = 1805 – 1880 MHz)
Drain Efficiency @ 60 W (2)
(V_DD = 26 Vdc, I_DQ = 500 mA, f = 1805 – 1880 MHz)
Input Return Loss (2)
(V_DD = 26 Vdc, P_out = 60 W CW, I_DQ = 500 mA,
f = 1805 – 1880 MHz)
G_ps
dB
11.5
13
—
η
%
43
45
—
IRL
—
—
–10
dB
Output Mismatch Stress
(V_DD = 26 Vdc, P_out = 60 W CW, I_DQ = 500 mA VSWR = 10:1,
All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
(2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1800 band, ensuring batch–to–batch
consistency.
MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3
2
MOTOROLA RF DEVICE DATA