MRF151G Datasheet, PDF (2/6 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER MOSFET

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS (Each Side)
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA)
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0)
Gate–Body Leakage Current (VGS = 20 V, VDS = 0)
ON CHARACTERISTICS (Each Side)
V(BR)DSS
IDSS
IGSS
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
Drain–Source On–Voltage (VGS = 10 V, ID = 10 A)
Forward Transconductance (VDS = 10 V, ID = 5.0 A)
DYNAMIC CHARACTERISTICS (Each Side)
VGS(th)
VDS(on)
gfs
Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
Ciss
Coss
Crss
Common Source Amplifier Power Gain
Gps
(VDD = 50 V, Pout = 300 W, IDQ = 500 mA, f = 175 MHz)
Drain Efficiency
η
(VDD = 50 V, Pout = 300 W, f = 175 MHz, ID (Max) = 11 A)
Load Mismatch
ψ
(VDD = 50 V, Pout = 300 W, IDQ = 500 mA,
VSWR 5:1 at all Phase Angles)
R1
+
BIAS 0 – 6 V
–
C4 C5
INPUT
R2
C1
T1
D.U.T.
Min
Typ
Max
Unit
125
—
—
Vdc
—
—
5.0
mAdc
—
—
1.0
µAdc
1.0
3.0
5.0
Vdc
1.0
3.0
5.0
Vdc
5.0
7.0
—
mhos
—
350
—
pF
—
220
—
pF
—
15
—
pF
14
16
—
dB
50
55
—
%
No Degradation in Output Power
L2
C9 C10
L1
T2
+
C11
50 V
–
OUTPUT
C12
C6
C2
C3
C7
C8
R1 — 100 Ohms, 1/2 W
R2 — 1.0 kOhm, 1/2 W
C1 — Arco 424
C2 — Arco 404
C3, C4, C7, C8, C9 — 1000 pF Chip
C5, C10 — 0.1 µF Chip
C6 — 330 pF Chip
C11 — 0.47 µF Ceramic Chip, Kemet 1215 or
C11 — Equivalent (100 V)
C12 — Arco 422
L1 — 10 Turns AWG #18 Enameled Wire,
L1 — Close Wound, 1/4″ I.D.
L2 — Ferrite Beads of Suitable Material for
L2 — 1.5 – 2.0 µH Total Inductance
T1 — 9:1 RF Transformer. Can be made of 15 – 18 Ohms
T1 — Semirigid Co–Ax, 62 – 90 Mils O.D.
T2 — 1:4 RF Transformer. Can be made of 16 – 18 Ohms
T2 — Semirigid Co–Ax, 70–90 Mils O.D.
Board Material — 0.062″ Fiberglass (G10),
1 oz. Copper Clad, 2 Sides, ε_r = 5.0
NOTE: For stability, the input transformer T1 must be loaded
NOTE: with ferrite toroids or beads to increase the common
NOTE: mode inductance. For operation below 100 MHz. The
NOTE: same is required for the output transformer.
Unless Otherwise Noted, All Chip Capacitors are ATC Type 100 or
Equivalent.
See Figure 6 for construction details of T1 and T2.
Figure 1. 175 MHz Test Circuit
MRF151G
2
MOTOROLA RF DEVICE DATA