MRF15090 Datasheet, PDF (2/8 Pages) Motorola, Inc – RF POWER TRANSISTOR

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS — continued
Emitter–Base Breakdown Voltage
(IE = 5 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0)
ON CHARACTERISTICS
DC Current Gain
(ICE = 1 Adc, VCE = 5 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 Vdc, IE = 0, f = 1 MHz) –
For Information Only. This Part Is Collector Matched.
V(BR)EBO
4
4.8
—
Vdc
ICES
—
—
10
mAdc
hFE
20
40
80
—
Cob
—
52
—
pF
FUNCTIONAL TESTS (Figure 12)
Common–Emitter Amplifier Power Gain
Gpe
(VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
Collector Efficiency
η
(VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
Intermodulation Distortion
IMD
(VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
Input Return Loss
IRL
(VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
Load Mismatch
ψ
(VCC = 28 Vdc, Pout = 90 W (PEP), ICQ = 250 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz, Load VSWR = 3:1, All Phase
Angles at Frequency of Test)
7.5
8.3
—
dB
30
36
—
%
—
– 32
– 28
dBc
12
15
—
dB
No Degradation in Output Power
MRF15090
2
MOTOROLA RF DEVICE DATA