MRF141 Datasheet, PDF (2/8 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER MOSFET

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA)
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0)
IDSS
—
—
5.0
mAdc
Gate–Body Leakage Current (VGS = 20 V, VDS = 0)
IGSS
—
—
1.0
µAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
Drain–Source On–Voltage (VGS = 10 V, ID = 10 A)
Forward Transconductance (VDS = 10 V, ID = 5.0 A)
DYNAMIC CHARACTERISTICS (1)
VGS(th)
1.0
3.0
5.0
Vdc
VDS(on)
0.1
0.9
1.5
Vdc
gfs
5.0
7.0
—
mhos
Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
—
350
—
pF
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Coss
—
420
—
pF
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Crss
—
35
—
pF
FUNCTIONAL TESTS
Common Source Amplifier Power Gain, f = 30; 30.001 MHz
(VDD = 28 V, Pout = 150 W (PEP), IDQ = 250 mA) f = 175 MHz
Drain Efficiency
(VDD = 28 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,
IDQ = 250 mA, ID (Max) = 5.95 A)
Intermodulation Distortion (1)
(VDD = 28 V, Pout = 150 W (PEP), f = 30 MHz,
f2 = 30.001 MHz, IDQ = 250 mA)
Load Mismatch
(VDD = 28 V, Pout = 150 W (PEP), f1 = 30; 30.001 MHz,
IDQ = 250 mA, VSWR 30:1 at all Phase Angles)
CLASS A PERFORMANCE
Gps
η
IMD(d3)
IMD(d11)
ψ
16
20
—
dB
—
10
—
40
45
—
%
dB
—
– 30
– 28
—
– 60
—
No Degradation in Output Power
Intermodulation Distortion (1) and Power Gain
(VDD = 28 V, Pout = 50 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, IDQ = 4.0 A)
GPS
—
23
—
dB
IMD(d3)
—
– 50
—
IMD(d9 _{– 13)}
—
– 75
—
NOTE:
1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
BIAS ⁺
0 – 12 V
–
C11 R4 C5
L1
+
C6
C7
C8
L2
C9
– ^C10
RF INPUT
R1
D.U.T. ^C4
T2
R3 ^C2
T1
R2
C3
C12
+
28 V
–
RF
OUTPUT
C2, C5, C6, C7, C8, C9 — 0.1 µF Ceramic Chip or
Monolythic with Short Leads
C3 — Arco 469
C4 — 820 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C10 — 10 µF/100 V Electrolytic
C11 — 1 µF, 50 V, Tantalum
C12 — 330 pF, Dipped Mica (Short leads)
L1 — VK200/4B Ferrite Choke or Equivalent, 3.0 µH
L2 — Ferrite Bead(s), 2.0 µH
R1, R2 — 51 Ω/1.0 W Carbon
R3 — 1.0 Ω/1.0 W Carbon or Parallel Two 2 Ω, 1/2 W Resistors
R4 — 1 kΩ/1/2 W Carbon
T1 — 16:1 Broadband Transformer
T2 — 1:25 Broadband Transformer
Board Material — 0.062″ Fiberglass (G10),
1 oz. Copper Clad, 2 Sides, e_r = 5
Figure 1. 30 MHz Test Circuit (Class AB)
MRF141
2
MOTOROLA RF DEVICE DATA