MRF1090MA Datasheet, PDF (2/6 Pages) Motorola, Inc – MICROWAVE POWER TRANSISTORS

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 50 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS (Pulse Width = 10 µs, Duty Cycle = 1.0%)
Common–Base Amplifier Power Gain
(VCC = 50 Vdc, Pout = 90 W pk, f = 1090 MHz)
Collector Efficiency
(VCC = 50 Vdc, Pout = 90 W pk, f = 1090 MHz)
Load Mismatch
(VCC = 50 Vdc, Pout = 90 W pk, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
Cob
GPB
η
ψ
—
12
16
pF
8.4
10.8
—
dB
35
40
—
%
No Degradation in Power Output
+
C2
C3
C4
+
50 Vdc
–
L1
L2
RF
INPUT
Z1
Z2
DUT
Z3
Z4
Z5
Z6
Z7
C1
Z8
Z9
RF
OUTPUT
C1, C2 — 220 pF Chip Capacitor, 100–mil ATC
C3 — 0.1 µF
C4 — 47 µF/75 V
L1, L2 — 3 Turns #18 AWG, 1/8″ ID
Z1 – Z9 — Distributed Microstrip Elements,
See Photomaster
Board Material — 0.031″ Thick Glass Teflon, ε_r = 2.5
Figure 1. 1090 MHz Test Circuit
120
f = 960 MHz
100
1090 MHz
80
1215 MHz
60
40
VCC = 50 V
tp = 10 µs
D = 1%
20
0
3
6
9
12
15
Pin, INPUT POWER (WATTS pk)
Figure 2. Output Power versus Input Power
MRF1090MA MRF1090MB
2
120
Pin = 10.5 W pk
100
9 W pk
80
7.5 W pk
60
40 ^{VCC = 50 V}
tp = 10 µs
D = 1%
20
960
1090
f, FREQUENCY (MHz)
6 W pk
4.5 W pk
1215
Figure 3. Output Power versus Frequency
MOTOROLA RF DEVICE DATA