MRF10500 Datasheet, PDF (2/4 Pages) Motorola, Inc – MICROWAVE POWER TRANSISTORS

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0)
V(BR)CES
Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCB = 36 Vdc, IE = 0)
V(BR)CBO
V(BR)EBO
ICBO
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc)
hFE
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz)
GPB
Collector Efficiency
η
(VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz)
Load Mismatch
ψ
(VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
Min
Typ
Max
Unit
65
—
—
Vdc
65
—
—
Vdc
3.5
—
—
Vdc
—
—
25
mAdc
20
—
—
—
8.5
9.0
—
dB
40
45
—
%
No Degradation in Output Power
RF INPUT
Z5
Z1 Z2 Z3 Z4
C2
C3
L1
D.U.T.
Z6 Z7 Z8 Z9
+
C4
C1
+
–
RF OUTPUT
C1 — 82 pF 100 Mil Chip Capacitor
C2 — 39 pF 100 Mil Chip Capacitor
C3 — 0.1 µF
C4 — 100 µF, 100 Vdc, Electrolytic
L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long
Z1–Z9 — Microstrip, See Details
Board Material — Teflon, Glass Laminate
Dielectric Thickness = 0.030″
ε_r = 2.55, 2 Oz. Copper
.700
.150
.625
.160
.081
1.309
.105
1.123
.216
.081
2.000
1.108
.500
0.140
.355
.081
.100
.644
.365
Figure 1. Test Circuit
MRF10500 MRF10501
2–2
MOTOROLA RF DEVICE DATA