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MRF10350 Datasheet, PDF (2/4 Pages) Motorola, Inc – MICROWAVE POWER TRANSISTOR | |||
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage (IC = 60 mAdc, VBE = 0)
V(BR)CES
CollectorâBase Breakdown Voltage (IC = 60 mAdc, IE = 0)
EmitterâBase Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)CBO
V(BR)EBO
Collector Cutoff Current (VCB = 36 Vdc, IE = 0)
ICBO
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc)
hFE
FUNCTIONAL TESTS
CommonâBase Amplifier Power Gain
(VCC = 50 Vdc, Pout = 350 W Peak, f = 1090 MHz)
GPB
Collector Efficiency
η
(VCC = 50 Vdc, Pout = 350 W Peak, f = 1090 MHz)
Load Mismatch
Ï
(VCC = 50 Vdc, Pout = 350 W Peak, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
Min
Typ
Max
Unit
65
â
â
Vdc
65
â
â
Vdc
3.5
â
â
Vdc
â
â
25
mAdc
20
â
â
â
8.5
9.0
â
dB
40
â
â
%
No Degradation in Output Power
RF INPUT
Z5
Z1 Z2 Z3 Z4
C2
C3
L1
D.U.T.
Z6 Z7 Z8 Z9
+
C4
C1
+
â
RF OUTPUT
C1 â 75 pF 100 Mil Chip Capacitor
C2 â 39 pF 100 Mil Chip Capacitor
C3 â 0.1 µF
C4 â 100 µF, 100 Vdc, Electrolytic
L1 â 3 Turns #18 AWG, 1/8â³ ID, 0.18 Long
Z1âZ9 â Microstrip, See Details
Board Material â Teflon, Glass Laminate
Dielectric Thickness = 0.030â³
εr = 2.55, 2 Oz. Copper
.094
.589
.573
.170
.083
.616
.838
.130
.395
.402
1.518 .571
.278
.394
.258 .170
.364
.594 1.685
.095
Figure 1. Test Circuit
.156
.159
.382 .083
.396
.100
.803
.160
MRF10350
2
MOTOROLA RF DEVICE DATA
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