MRF10120 Datasheet, PDF (2/4 Pages) Motorola, Inc – MICROWAVE POWER TRANSISTOR

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc)
hFE
20
—
—
—
FUNCTIONAL TESTS (7.0 µs Pulses @ 54% duty cycle for 3.4 ms; then off for 4.5 ms; overall duty cycle = 23%)
Common–Base Amplifier Power Gain
(VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz)
GPB
8.0
9.2
—
dB
Collector Efficiency
(VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz)
η
50
55
—
%
Load Mismatch
(VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz,
VSWR = 3:1 All Phase Angles)
ψ
No Degradation in Output Power
RF
INPUT
Z5
Z1
Z2
Z3
Z4
+
C2
C3
C4
L1
D.U.T.
Z6
Z7
Z8
Z9
C1
+
36 Vdc
–
RF
OUTPUT
C1 — 270 pF 100 Mil Chip Capacitor
C2 — 220 pF 100 Mil Chip Capacitor
C3 — 0.1 µF
C4 — 47 µF 50 V Electrolytic
L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long
Z1 – Z9 — Microstrip, See Details
Board Material — Teflon^®/Glass Laminate,
Dielectric Thickness = 0.030″,
ε_r = 2.55, 2 Oz. Copper
0.2
0.15
1.1
0.081
0.6
0.3
0.13
0.91
0.6
0.4
0.15
ALL DIMENSIONS IN INCHES
1.00
1.06
0.52
0.8
0.66
0.55
Figure 1. Test Circuit
0.22
0.44
0.081
0.05
0.74
0.3
MRF10120
2
MOTOROLA RF DEVICE DATA