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MRF10031 Datasheet, PDF (2/4 Pages) Motorola, Inc – MICROWAVE POWER TRANSISTOR | |||
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage (IC = 25 mAdc, VBE = 0)
V(BR)CES
55
â
â
Vdc
CollectorâBase Breakdown Voltage (IC = 25 mAdc, IE = 0)
EmitterâBase Breakdown Voltage (IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current (VCB = 36 Vdc, IE = 0)
V(BR)CBO
55
â
â
Vdc
V(BR)EBO
3.5
â
â
Vdc
ICBO
â
â
2.0
mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 500 mAdc, VCE = 5.0 Vdc)
hFE
20
â
â
â
FUNCTIONAL TESTS (10 µs Pulses @ 50% duty cycle for 3.5 ms; overall duty cycle â 25%)
CommonâBase Amplifier Power Gain
(VCC = 36 Vdc, Pout = 30 W Peak, f = 960 MHz)
GPB
9.0
9.5
â
dB
Collector Efficiency
(VCC = 36 Vdc, Pout = 30 W Peak, f = 960 MHz)
η
40
45
â
%
Load Mismatch
(VCC = 36 Vdc, Pout = 30 W Peak, f = 960 MHz,
VSWR = 10:1 All Phase Angles)
Ï
No Degradation in Output Power
Z5
RF INPUT
Z1 Z2 Z3 Z4
D.U.T.
+
C2 C3 C4
L1
+
36 Vdc
â
RF OUTPUT
Z6 Z7 Z8 Z9
C1
C1 â 75 pF 100 Mil Chip Capacitor
C2 â 39 pF 100 Mil Chip Capacitor
C3 â 0.1 µF
C4 â 1000 µF, 50 Vdc, Electrolytic
L1 â 3 Turns #18 AWG, 1/8â³ ID, 0.18 Long
Z1 â Z9 â Microstrip, See Details
Board Material â Teflon, Glass Laminate
Dielectric Thickness = 0.030â³
εr = 2.55, 2 Oz. Copper
BROADBAND FIXTURE
.628
.223
1.350
.118
.083
.733
.780
.669
.083
1.020
.218
2.138
.215
.354
.389
.113
.100
.083
1.210
.400
.128
Figure 1. Test Circuit
MRF10031
2
MOTOROLA RF DEVICE DATA
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