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MMDF6N03HD Datasheet, PDF (2/10 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 30 VOLTS | |||
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MMDF6N03HD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainâtoâSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Zero Gate Voltage Drain Current
(VDS = 24 Vdc, VGS = 0 Vdc)
(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateâBody Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
V(BR)DSS
30
IDSS
â
â
IGSS
â
Vdc
â
â
µAdc
â
1.0
â
20
â
100
nAdc
VGS(th)
1.0
â
Vdc
â
Static DrainâtoâSource OnâResistance
(VGS = 10 Vdc, ID = 5.0 Adc)
(VGS = 4.5 Vdc, ID = 3.9 Adc)
RDS(on)
â
â
Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc)
gFS
â
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS(2)
(VDS = 24 Vdc,
VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
â
Coss
â
Crss
â
TurnâOn Delay Time
Rise Time
TurnâOff Delay Time
Fall Time
(VDD = 15 Vdc,
VGS = 10 Vdc,
ID = 1.0 Adc,
RG = 6.0 â¦)
td(on)
â
tr
â
td(off)
â
tf
â
TurnâOn Delay Time
Rise Time
TurnâOff Delay Time
Fall Time
(VDD = 15 Vdc,
VGS = 4.5 Vdc,
ID = 1.0 Adc,
RG = 6.0 â¦)
td(on)
â
tr
â
td(off)
â
tf
â
Gate Charge
(See Figure 8)
(VDS = 15 Vdc,
ID = 5.0 Adc,
VGS = 10 Vdc)
QT
â
Q1
â
Q2
â
Q3
â
SOURCEâDRAIN DIODE CHARACTERISTICS
Forward OnâVoltage
(IS = 1.7 Adc, VGS = 0 Vdc)
(IS = 1.7 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
â
â
Reverse Recovery Time
trr
â
(IS = 5.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
ta
â
tb
â
Reverse Recovery Stored Charge
QRR
â
(1) Pulse Test: Pulse Width ⤠300 µs, Duty Cycle ⤠2%.
(2) Switching characteristics are independent of operating junction temperature.
mâ¦
28
35
42
50
9.0
â
Mhos
430
600
pF
217
300
67.5
135
8.2
16.4
ns
8.48
16.9
89.6
179
61.1
122
11.8
23
ns
51.3
102
47.2
94.5
62
104
15.7
31.4
nC
2.0
â
4.6
â
3.86
â
Vdc
0.77
1.2
0.65
â
54.5
â
ns
14.8
â
39.7
â
0.048
â
µC
2
Motorola TMOS Power MOSFET Transistor Device Data
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