MMDF4P03HD Datasheet, PDF (2/10 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 30 VOLTS

MMDF4P03HD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Zero Gate Voltage Drain Current
(VDS = 24 Vdc, VGS = 0 Vdc)
(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
V(BR)DSS
30
IDSS
—
—
IGSS
—
VGS(th)
1.0
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.5 Adc)
(VGS = 4.5 Vdc, ID = 2.0 Adc)
RDS(on)
—
—
Forward Transconductance (VDS = 15 Vdc, ID = 3.5 Adc)
gFS
—
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS(2)
(VDS = 24 Vdc,
VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
Coss
—
Crss
—
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 15 Vdc,
VGS = 10 Vdc,
ID = 1.0 Adc,
RG = 6.0 Ω)
td(on)
—
tr
—
td(off)
—
tf
—
Gate Charge
(See Figure 8)
(VDS = 10 Vdc,
ID = 3.5 Adc,
VGS = 10 Vdc)
QT
—
Q1
—
Q2
—
Q3
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 1.7 Adc, VGS = 0 Vdc)
(IS = 1.7 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
—
—
Reverse Recovery Time
trr
—
(IS = 3.5 Adc,
VGS = 0 Vdc,
dIS/dt = 100 A/µs)
ta
—
tb
—
Reverse Recovery Stored Charge
QRR
—
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
Vdc
—
—
µAdc
—
1.0
—
20
—
100
nAdc
Vdc
—
—
0.075
0.125
6.0
0.085
0.16
—
Ω
Mhos
425
600
pF
209
300
57.2
80
11.7
23.4
ns
15.8
31.6
167.3 334.6
102.6 205.2
14.8
29.6
nC
1.7
—
4.7
—
3.42
—
Vdc
0.9
1.2
0.7
—
77.4
—
ns
19.9
—
57.5
—
0.088
—
µC
2
Motorola TMOS Power MOSFET Transistor Device Data