MMBTH10LT1 Datasheet, PDF (2/6 Pages) Motorola, Inc – VHF/UHF Transistor

MMBTH10LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain (IC = 4.0 mAdc, VCE = 10 Vdc)
Collector–Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 0.4 mAdc)
Base–Emitter On Voltage (IC = 4.0 mAdc, VCE = 10 Vdc)
SMALL–SIGNAL CHARACTERISTICS
hFE
60
VCE(sat)
—
VBE
—
—
—
—
—
0.5
Vdc
—
0.95
Vdc
Current–Gain – Bandwidth Product
(IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
Collector–Base Capacitance
(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)
Common–Base Feedback Capacitance
(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)
Collector Base Time Constant
(IC= 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz)
fT
650
Ccb
—
Crb
—
rb′Cc
—
—
—
MHz
—
0.7
pF
—
0.65
pF
—
9.0
ps
TYPICAL CHARACTERISTICS
80
70
60
50
40
30
20
10
0
100
70
60
50
40
30
20
10
0
– 10
– 20
– 30
100
COMMON–BASE y PARAMETERS versus FREQUENCY
(VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25°C)
yib, INPUT ADMITTANCE
0
gib
– 10
– 20
– bib
1000 MHz
– 30
– 40
700
– 50
400
200 ₁₀₀
200 300 400 500 700
f, FREQUENCY (MHz)
Figure 1. Rectangular Form
– 60
1000
0
10 20 30 40 50 60 70 80
gib (mmhos)
Figure 2. Polar Form
yfb, FORWARD TRANSFER ADMITTANCE
bfb
– gfb
60
200
400
50
100
40
600
700
30
1000 MHz
20
10
200 300 400 500
700
1000
70 60 50 40 30 20 10 0 – 10 – 20 – 30
f, FREQUENCY (MHz)
gfb (mmhos)
Figure 3. Rectangular Form
Figure 4. Polar Form
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data