MJE521 Datasheet, PDF (2/4 Pages) Motorola, Inc – 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS

MJE521
10
5.0
3.0
2.0
1.0
TJ = 150°C
1.0 ms
5.0 ms
dc
0.5
SECOND BREAKDOWN LIMITED
0.3
BONDING WIRE LIMITED
0.2
THERMALLY LIMITED @ TC = 25°C
0.1
2.0 3.0
5.0
10
20 30 40
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 1. Active–Region Safe Operating Area
The data of Figure 1 based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
vlimits are valid for duty cycles to 10% provided (TJpk)
150_C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
1000
700
500
VCE = 1.0 V
300
200
TJ = 150°C
100
70
25°C
50
– 55°C
30
20
10
2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
1.5
1.2
TJ = 25°C
0.9
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 2.0 V
0.3
VCE(sat) @ IC/IB = 10
0
2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltage
1.0
0.7 _{D = 0.5}
0.5
0.3
0.2
0.2
0.1
0.1
0.05
0.07
0.05 ^0.01
0.03 _{SINGLE PULSE}
0.02
0.01
0.01 0.02 0.03 0.05 0.1
θ_JC(t) = r(t) θ_JC
θ_JC = 5.0°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θ_JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2 0.3 0.5 1.0
2.0 3.0 5.0 10
t, TIME (ms)
20 30 50
Figure 4. Thermal Response
100 200 300 500 1000
2
Motorola Bipolar Power Transistor Device Data