MJE340 Datasheet, PDF (2/4 Pages) Motorola, Inc – 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS

MJE340
32
28
24
20
16
12
8.0
MJE340
4.0
0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 1. Power Temperature Derating
1.0
0.8
TJ = 25°C
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 10 V
0.4
VCE(sat) @ IC/IB = 10
0.2
IC/IB = 5.0
0
10
20 30 50
100
200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 2. “On” Voltages
ACTIVE–REGION SAFE OPERATING AREA
1.0
0.5
0.3
TJ = 150°C
0.2
10 µs
500 µs
dc 1.0 ms
0.1
0.05
0.03
0.02
0.01
10
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT TC = 25°C
SINGLE PULSE
20 30
50 70 100
200 300
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 3. MJE340
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transis-
tor must not be subjected to greater dissipation than the curves indicate.
v ^{The data of Figure 3 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are}
valid for duty cycles to 10% provided TJ(pk) 150_C. At high case temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by second breakdown.
300
200
100
TJ = 150°C
70
+100°C
50
+ 25°C
30
20
– 55°C
VCE = 10 V
VCE = 2.0 V
10
1.0
2
2.0
3.0
5.0 7.0
10
20
30
50
IC, COLLECTOR CURRENT (mAdc)
Figure 4. DC Current Gain
70 100
200 300
500
Motorola Bipolar Power Transistor Device Data