MHPM6B15E60D3 Datasheet, PDF (2/5 Pages) Motorola, Inc – Hybrid Power Module

MHPM6B15E60D3 MHPM6B10E60D3 MHPM6B7E60D3
MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Average Converter Output Current (Peak–to–Average ratio of 10, TC = 95°C)
Continuous Input Rectifier Current (TC = 25°C)
Non–Repetitive Peak Input Rectifier Forward Surge Current ⁽²⁾
(TJ = 95°C prior to start of surge)
IGBT Power Dissipation per die (TC = 95°C)
7E60
10E60
15E60
IOmax
IDC
IFSM
PD
Free–Wheeling Diode Power Dissipation per die (TC = 95°C)
7E60
PD
10E60
15E60
Input Rectifier Power Dissipation per die (TC = 95°C)
Junction Temperature Range
Short Circuit Duration (VCE = 400 V, TJ = 125°C)
Isolation Voltage, pin to baseplate
Operating Case Temperature Range
Storage Temperature Range
Mounting Torque — Heat Sink Mounting Holes
PD
TJ
tsc
VISO
TC
Tstg
—
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
DC AND SMALL SIGNAL CHARACTERISTICS
Input Rectifier Forward Voltage (I = 15 A)
TJ = 125°C
VF
—
—
Maximum Instantaneous Reverse Current (V = 900 V)
TJ = 150°C
IR
—
—
Gate–Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V)
IGES
—
Collector–Emitter Leakage Current (VCE = 600 V, VGE = 0 V)
ICES
—
Gate–Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)
VGE(th)
4.0
Collector–Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V)
V(BR)CES
600
Collector–Emitter Saturation Voltage (IC = ICmax, VGE = 15 V)
TJ = 125°C
VCE(SAT)
—
—
Free–Wheeling Diode Forward Voltage (IF = IFmax, VGE = 0 V)
TJ = 125°C
VF
—
—
Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz)
7E60
Cies
—
10E60
—
15E60
—
THERMAL CHARACTERISTICS (EACH DIE)
Thermal Resistance — IGBT
7E60
R_qJC
—
10E60
—
15E60
—
Thermal Resistance — Free–Wheeling Diode
7E60
R_qJC
—
10E60
—
15E60
—
Thermal Resistance — Input Rectifier
(2) 1.0 ms = 10% pulse width (tw 10%)
R_qJC
—
Value
20
20
475
14
17
23
7.4
9.0
13
13
– 40 to +150
10
2500
– 40 to +95
– 40 to +150
12
Unit
A
A
A
W
W
W
°C
ms
Vac
°C
°C
lb–in
Typ
Max
Unit
0.97
1.2
V
0.88
—
50
—
mA
3000
—
—
±50
mA
5.0
100
mA
6.0
8.0
V
—
—
V
2.0
2.4
V
1.8
—
2.0
2.3
V
1.8
—
780
—
pF
1020
—
1605
—
3.1
3.8
°C/W
2.6
3.2
1.9
2.4
6.0
7.5
°C/W
4.8
6.1
3.4
4.2
3.4
4.2
°C/W
2
Motorola IGBT Device Data