MGSF3442VT1 Datasheet, PDF (2/6 Pages) Motorola, Inc – N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

MGSF3442VT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µA)
V(BR)DSS
20
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 70°C)
IDSS
—
—
Gate–Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
IGSS
—
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
VGS(th)
0.6
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 4.0 A)
(VGS = 2.5 Vdc, ID = 3.4 A)
rDS(on)
—
—
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 5.0 V)
(VDS = 5.0 V)
Ciss
—
Coss
—
Transfer Capacitance
SWITCHING CHARACTERISTICS(2)
(VDG = 5.0 V)
Crss
—
Turn–On Delay Time
td(on)
—
Rise Time
Turn–Off Delay Time
(VDD = 10 Vdc, ID = 1.0 A,
VGEN = 10 V, RL = 10 Ω)
tr
—
td(off)
—
Fall Time
tf
—
Gate Charge
QT
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
—
Pulsed Current
ISM
—
Forward Voltage(2)
VSD
—
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
Vdc
—
—
µAdc
—
1.0
—
5.0
—
±100
nAdc
—
0.058
0.072
—
0.070
0.095
Vdc
Ohms
90
—
pF
50
—
10
—
8.0
20
ns
24
40
36
60
10
20
—
—
nC
—
1.0
A
—
5.0
A
—
1.2
V
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data