H11A1 Datasheet, PDF (2/6 Pages) Motorola, Inc – 6-Pin DIP Optoisolators Transistor Output

H11A1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)
Characteristic
Symbol
INPUT LED
Forward Voltage (IF = 10 mA,
TA = 25°C)
VF
TA = –55°C
TA = 100°C
Reverse Leakage Current (VR = 3 V)
IR
Capacitance (V = 0 V, f = 1 MHz)
CJ
OUTPUT TRANSISTOR
Collector–Emitter Dark Current (VCE = 10 V)
TA = 25°C
TA = 100°C
ICEO
Collector–Base Dark Current (VCB = 10 V)
TA = 25°C
TA = 100°C
ICBO
Collector–Emitter Breakdown Voltage (IC = 10 mA)
V(BR)CEO
Collector–Base Breakdown Voltage (IC = 100 µA)
V(BR)CBO
Emitter–Collector Breakdown Voltage (IE = 100 µA)
V(BR)ECO
DC Current Gain (IC = 5 mA, VCE = 5 V) (Typical Value)
hFE
Collector–Emitter Capacitance (f = 1 MHz, VCE = 0 V)
CCE
Collector–Base Capacitance (f = 1 MHz, VCB = 0 V)
CCB
Emitter–Base Capacitance (f = 1 MHz, VEB = 0 V)
CEB
COUPLED
Output Collector Current (IF = 10 mA, VCE = 10 V) H11A1
IC (CTR)(2)
Collector–Emitter Saturation Voltage (IC = 0.5 mA, IF = 10 mA)
Turn–On Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3)
Turn–Off Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3)
Rise Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3)
Fall Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3)
Isolation Voltage (f = 60 Hz, t = 1 sec)(4)
Isolation Resistance (V = 500 V)(4)
Isolation Capacitance (V = 0 V, f = 1 MHz)(4)
VCE(sat)
ton
toff
tr
tf
VISO
RISO
CISO
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = IC/IF x 100%.
3. For test circuit setup and waveforms, refer to Figure 11.
4. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
Min
—
—
—
—
—
—
—
—
—
30
70
7
—
—
—
—
5 (50)
—
—
—
—
—
7500
1011
—
Typ⁽¹⁾
1.15
1.3
1.05
0.01
18
1
1
0.2
100
45
100
7.8
500
7
19
9
12 (120)
0.1
2.8
4.5
1.2
1.3
—
—
0.2
Max
Unit
1.5
Volts
—
—
10
µA
—
pF
50
nA
—
µA
20
nA
—
—
Volts
—
Volts
—
Volts
—
—
—
pF
—
pF
—
pF
—
mA (%)
0.4
Volts
—
µs
—
µs
—
µs
—
µs
—
Vac(pk)
—
Ω
—
pF
2
Motorola Optoelectronics Device Data