BUX48 Datasheet, PDF (2/8 Pages) Mospec Semiconductor – POWER TRANSISTORS(15A,400-450V,175W)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{BUX48 BUX48A}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{OFF CHARACTERISTICS (1)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Sustaining Voltage (Table 1)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 200 mA, IB = 0) L = 25 mH
BUX48
BUX48A
VCEO(sus)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Cutoff Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(VCEX = Rated Value, VBE(off) = 1.5 Vdc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(VCEX = Rated Value, VBE(off) = 1.5 Vdc, TC = 125_C)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Cutoff Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{(VCE = Rated VCEX, RBE = 10 Ω)}
TC = 25_C
TC = 125_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter Cutoff Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(VEB = 5 Vdc, IC = 0)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter–Base Breakdown Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IE = 50 mA – IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{SECOND BREAKDOWN}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Second Breakdown Collector Current with Base Forward Biased
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Clamped Inductive SOA with Base Reverse Biased
ICEX
ICER
IEBO
V(BR)EBO
IS/b
RBSOA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ON CHARACTERISTICS (1)
DC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 10 Adc, VCE = 5 Vdc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 8 Adc, VCE = 5 Vdc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Saturation Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 10 Adc, IB = 2 Adc)
(IC = 15 Adc, IB = 3 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 10 Adc, IB = 2 Adc, TC = 100_C)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{(IC = 8 Adc, IB = 1.6 Adc)}
(IC = 12 Adc, IB = 2.4 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 8 Adc, IB = 1.6 Adc, TC = 100_C)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base–Emitter Saturation Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 10 Adc, IB = 2 Adc)
(IC = 10 Adc, IB = 2 Adc, TC = 100_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 8 Adc, IB = 1.6 Adc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 8 Adc, IB = 1.6 Adc, TC = 100_C)
BUX48
BUX48A
BUX48
BUX48A
BUX48
BUX48A
hFE
VCE(sat)
VBE(sat)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{DYNAMIC CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Output Capacitance
Cob
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{SWITCHING CHARACTERISTICS Resistive Load (Table 1)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Delay Time}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Rise Time}
IC = 10 A, IB = 2 A
IC = 8 A, IB = 1.6 A
td
BUX48
BUX48A
tr
Storage Time
Duty Cycle = 2%, VBE(off) = 5 V
ts
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Tp = 30 µs, VCC = 300 V}
Fall Time
tf
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Inductive Load, Clamped (Table 1)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Storage Time}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Fall Time}
IC = 10 A
IB1 = 2 A
BUX48
(TC = 25_C)
tsv
tfi
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Storage Time}
tsv
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Crossover Time}
IC = 8 A
IB1 = 1.6 A
BUX48A ^{(TC = 100_C)}
tc
Fall Time
tfi
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{v (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%.}
Min
Typ
Max
400
—
—
450
—
—
—
—
0.2
—
—
2
—
—
0.5
—
—
3
—
—
0.1
7
—
—
See Figure 12
See Figure 13
8
—
—
8
—
—
—
—
1.5
—
—
5
—
—
2
—
—
1.5
—
—
5
—
—
2
—
—
1.6
—
—
1.6
—
—
1.6
—
—
1.6
—
—
350
—
0.1
0.2
—
0.4
0.7
—
1.3
2
—
0.2
0.4
—
1.3
—
—
0.06
—
—
1.5
2.5
—
0.3
0.6
—
0.17
0.35
Unit
Vdc
mAdc
mAdc
mAdc
Vdc
Vdc
Vdc
pF
µs
µs
Vcl = 300 V, VBE(off) = 5 V, Lc = 180µH
3–402
Motorola Bipolar Power Transistor Device Data