2N5400 Datasheet, PDF (2/6 Pages) Motorola, Inc – Amplifier Transistor(PNP Silicon)

2N5400 2N5401
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
2N5400
2N5401
hFE
—
30
—
50
—
(IC = 10 mAdc, VCE = 5.0 Vdc)
2N5400
2N5401
40
180
60
240
(IC = 50 mAdc, VCE = 5.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 250 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
2N5400
2N5401
2N5400
2N5401
2N5400
2N5401
40
50
VCE(sat)
—
—
VBE(sat)
—
—
fT
100
100
Cobo
—
hfe
30
40
NF
—
—
—
Vdc
0.2
0.5
Vdc
1.0
1.0
MHz
400
300
6.0
pF
—
200
200
8.0
dB
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data