VN2410LG Datasheet, PDF (1/4 Pages) Motorola, Inc – TMOS FET Transistor N-Channel - Enhancement

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by VN2410L/D
TMOS FET Transistor
N–Channel — Enhancement
VN2410L
3 DRAIN
2
GATE
1 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain – Source Voltage
Drain – Gate Voltage
Gate – Source Voltage
– Continuous
– Non–repetitive (tp ≤ 50 µs)
Continuous Drain Current
Pulsed Drain Current
Power Dissipation @ TC = 25°C
Derate above 25°C
VDSS
240
Vdc
VDGR
60
Vdc
VGS
± 20
Vdc
VGSM
± 40
Vpk
ID
200
mAdc
IDM
500
mAdc
PD
350
mW
2.8
mW/°C
Operating and Storage Temperature
TJ, Tstg
—
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/16″ from case for 10
seconds
R_θJA
TL
312.5
300
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
STATIC CHARACTERISTICS
Drain – Source Breakdown Voltage
(VGS = 0, ID = 100 µA)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 120 Vdc, VGS = 0)
(VDS = 120 Vdc, VGS = 0, TA = 125°C)
Gate– Body Leakage
(VDS = 0, VGS = ±15 V)
IDSS
IGSS
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mA)
On–State Drain Current(1)
(VGS = 10 V, VDS ≥ 2.0 VDS(on))
Drain–Source On Resistance(1)
(VGS = 2.5 V, ID = 0.1 A)
(VGS = 10 V, ID = 0.5 A)
Forward Transconductance(1)
(VDS = 10 V, ID = 0.5 A)
v 1. Pulse Test; Pulse Width < 300 µs, Duty Cycle 2.0%.
VGS(th)
ID(on)
rDS(on)
gfs
TMOS is a registered trademark of Motorola, Inc.
REV 1
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1
2
3
CASE 29–04, STYLE 22
TO–92 (TO–226AA)
Min
Max
Unit
240
—
Vdc
µAdc
—
10
—
500
—
±100
nAdc
0.8
2.0
Vdc
1.0
—
Adc
Ω
—
10
—
10
300
—
mS
1