VN2222LL Datasheet, PDF (1/4 Pages) Motorola, Inc – TMOS FET Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
TMOS FET Transistor
N–Channel — Enhancement
3 DRAIN
2
GATE
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by VN2222LL/D
VN2222LL
Motorola Preferred Device
1 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain – Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
— Continuous
— Non–repetitive (tp ≤ 50 µs)
Drain Current
Continuous
Pulsed
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
60
60
± 20
± 40
150
1000
400
3.2
Vdc
Vdc
Vdc
Vpk
mAdc
mW
mW/°C
Operating and Storage
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for
Soldering Purposes, 1/16″ from case
for 10 seconds
R_θJA
TL
312.5
300
°C/W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 100 µAdc)
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TJ = 125°C)
Gate–Body Leakage Current, Forward
(VGSF = 30 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
V(BR)DSS
IDSS
IGSSF
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static Drain–Source On–Resistance
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 10 Vdc, ID = 0.5 Vdc, TC = 125°C)
v v 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
VGS(th)
rDS(on)
1
2
3
CASE 29–04, STYLE 22
TO–92 (TO–226AA)
Min
Max
Unit
60
—
Vdc
µAdc
—
10
—
500
—
–100
nAdc
0.6
2.5
Vdc
Ω
—
7.5
—
13.5
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1