VN0300L Datasheet, PDF (1/4 Pages) Motorola, Inc – TMOS FET Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by VN0300L/D
TMOS FET Transistor
N–Channel — Enhancement
3 DRAIN
2
GATE
VN0300L
Motorola Preferred Device
MAXIMUM RATINGS
1 SOURCE
Rating
Symbol
Value
Unit
Drain – Source Voltage
Drain – Gate Voltage
Gate – Source Voltage
– Continuous
– Non–repetitive (tp ≤ 50 µs)
Continuous Drain Current
Pulsed Drain Current
Power Dissipation @ TC = 25°C
Derate above 25°C
VDSS
60
V
VDGR
60
V
VGS
± 20
Vdc
VGSM
± 40
Vpk
ID
200
mA
IDM
500
mA
PD
350
mW
2.8
mW/°C
Operating and Storage Temperature
TJ, Tstg
—
°C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/16” from case for 10
seconds
R_θJA
TL
312.5
300
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
STATIC CHARACTERISTICS
Drain – Source Breakdown Voltage
(VDS = 0, ID = 10 µA)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TA = 125°C)
Gate–Body Leakage
(VDS = 0, VGS = ±30 V)
IDSS
IGSS
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mA)
On–State Drain Current(1)
(VDS = VGS, ID = 1.0 mA)
Drain–Source On Resistance(1)
(VGS = 5.0 V, ID = 0.3 A)
(VGS = 10 V, ID = 1.0 A)
Forward Transconductance(1)
(VDS = 10 V, ID = 0.5 A)
v 1. Pulse Test; Pulse Width < 300 ms, Duty Cycle 2.0%.
VGS(th)
ID(on)
rDS(on)
gfs
TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1
2
3
CASE 29–04, STYLE 22
TO–92 (TO–226AA)
Min
Max
Unit
30
—
V
µA
—
10
—
500
—
±100
nA
0.8
2.5
V
1.0
—
A
Ω
—
3.3
—
1.2
200
—
mS
1