TPV8100B Datasheet, PDF (1/6 Pages) Motorola, Inc – NPN SILICON RF POWER TRANSISTOR

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
The TPV8100B is designed for output stages in band IV and V TV transmitter
amplifiers. It incorporates high value emitter ballast resistors, gold metalliza-
tions and offers a high degree of reliability and ruggedness.
Including double input and output matching networks, the TPV8100B
features high impedances. It can easily operate in a full 470 MHz to 860 MHz
bandwidth in a single and simple circuit.
• To be used class AB for TV band IV and V.
• Specified 28 Volts, 860 MHz Characteristics
Output Power = 125 Watts (peak sync.)
Output Power = 100 Watts (CW)
Minimum Gain = 8.5 dB
• Specified 32 Volts, 860 MHz Characteristics
Output Power = 150 Watts (peak sync.)
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Order this document
by TPV8100B/D
TPV8100B
150 W, 470 – 860 MHz
NPN SILICON
RF POWER TRANSISTOR
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Current — Continuous
Total Device Dissipation @ 25°C Case
Derate above 25°C
Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA, Rbe = 75 Ω)
V(BR)CER
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc)
V(BR)EBO
Collector–Base Breakdown Voltage
(IE = 20 mAdc)
V(BR)CBO
Collector–Emitter Leakage
(VCE = 28 V, Rbe = 75 Ω)
ICER
NOTE:
1. Thermal resistance is determined under specified RF operating condition.
Symbol
VCER
VCBO
VEBO
IC
PD
TJ
Tstg
Symbol
R_θJC
Min
30
4
65
—
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
CASE 398–03, STYLE 1
Value
40
65
4
12
215
1.25
200
– 65 to +150
Max
0.8
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
10
mA
(continued)
TPV8100B
1