TPV598 Datasheet, PDF (1/4 Pages) Motorola, Inc – UHF LINEAR POWER TRANSISTOR

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
UHF Linear Power Transistor
Designed for 4.0 watt stages in Band V TV transposer amplifiers. Gold
metallized dice and diffused emitter ballast resistors are used to enhance
reliability, ruggedness and linearity.
• Band IV and V (470– 860 MHz)
• 4.0 W — Pref @ – 60 dB IMD
• 25 V — VCC
• High Gain — 7.0 dB Min, Class A @ f = 860 MHz
• Gold Metallization for Reliability
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by TPV598/D
TPV598
4.0 W, 470 – 860 MHz
UHF LINEAR
POWER TRANSISTOR
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
TJ
Tstg
27
Vdc
45
Vdc
4.0
Vdc
200
°C
– 65 to + 200
°C
Characteristic
Thermal Resistance, Junction to Case (TC = 70°C)
Thermal Resistance, Case to Heatsink
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 60 mA, IB = 0)
Collector–Base Breakdown Voltage (IC = 10 mA, IE = 0)
Emitter–Base Breakdown Voltage (IE = 3.0 mA, IC = 0)
Collector–Emitter Leakage Current (VCE = 20 V)
ON CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEO
DC Current Gain (IC = 500 mA, VCE = 20 V)
hFE
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 25 V, IE = 0, f = 1.0 MHz)
Cob
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCE = 25 V, Pout = 4.0 W, f = 860 MHz, IC = 850 mA)
Intermodulation Distortion, 3 Tone
(f = 860 MHz, VCE = 25 V, IE = 850 mA, Pref = 4.0 W,
Vision Carrier = – 8.0 dB, Sound Carrier = –7.0 dB,
Sideband Signal = –16 dB, Specification TV05001)
GPE
IMD1
Cutoff Frequency
f_τ
(VCE = 25 V, IC = 850 mA)
Symbol
R_θJC
R_θCH
Min
27
45
4.0
—
10
—
7.0
—
—
CASE 244–04, STYLE 1
(.280 SOE)
Max
6.2
0.4 Typ
Typ
Max
—
—
—
—
—
—
—
5.0
—
—
—
20
—
—
—
– 58
Unit
°C/W
°C/W
Unit
Vdc
Vdc
Vdc
mA
—
pF
dB
dB
2.0
—
GHz
REV 1
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
TPV598
1