TP62601 Datasheet, PDF (1/4 Pages) Motorola, Inc – MICROWAVE POWER OSCILLATOR TRANSISTOR

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Microwave Power
Oscillator Transistor
. . . designed for use as power oscillators at frequencies to 3.0 GHz with typical
output power of over 1.0 watt.
• Operation to 3.0 GHz
• High Output Power (1.2 W Typ @ 2.5 GHz)
• Rugged — Capable of Withstanding High Load VSWR
• High Reliability
• Hermetic Package
• Gold Metallization
• Diffused Emitter Ballast Resistors
• Common Collector Configuration
• Formerly named TRW62601
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Order this document
by TP62601/D
TP62601
MICROWAVE
POWER
OSCILLATOR
TRANSISTOR
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 20 mA, IB = 0)
Collector–Base Breakdown Voltage (IC = 1.0 mA, IE = 0)
Emitter–Base Breakdown Voltage (IE = 0.25 mA, IC = 0)
Collector–Emitter Breakdown Voltage (IC = 20 mA, RBE = 10 Ω)
Collector Cutoff Current (VCB = 28 V, IE = 0)
ON CHARACTERISTICS
DC Current Gain (IC = 100 mA, VCE = 5.0 V)
Symbol
VCEO
VCBO
VEBO
IC
TJ
Tstg
Symbol
Symbol
R_θJC
Min
V(BR)CEO
22
V(BR)CBO
45
V(BR)EBO
3.5
V(BR)CER
50
ICBO
—
hFE
20
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
CASE 328A–03, STYLE 3
(GP–13)
Value
Unit
22
Vdc
45
Vdc
3.5
Vdc
0.5
Adc
200
°C
– 65 to + 200
°C
Max
Unit
15
°C/W
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
0.125
mAdc
—
120
—
(continued)
TP62601
1