TP3061 Datasheet, PDF (1/6 Pages) Motorola, Inc – UHF POWER TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
UHF Power Transistor
The TP3061 is designed for 960 MHz mobile base stations in both analog and
digital applications. It incorporates high value emitter ballast resistors, gold
metallizations and offers a high degree of reliability and ruggedness. Including
double input and output matching networks, the TP3060 features high
impedances and is easy to match.
• Motorola Advanced Amplifier Concept Package
• Oxynitride Passivation
• Specified 26 Volts, 960 MHz Characteristics
Output Power = 45 Watts
Minimum Gain = 8.0 dB
Efficiency = 50%
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Order this document
by TP3061/D
TP3061
45 W, 960 MHz
UHF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1) at 70°C Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 60 mA, RBE = 75 Ω)
V(BR)CER
Emitter–Base Breakdown Voltage
(IC = 6.0 mAdc)
V(BR)EBO
Collector–Base Breakdown Voltage (IE = 60 mAdc)
V(BR)CBO
Collector–Emitter Leakage (VCE = 26 V, RBE = 75 Ω)
ICER
NOTE:
1. Thermal resistance is determined under specified RF operating condition.
Symbol
VCER
VCBO
VEBO
IC
PD
Tstg
TJ
Symbol
R_θJC
Min
40
3.5
48
—
CASE 333A–02, STYLE 2
Value
40
48
4.0
10
175
1.0
– 65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Max
Unit
1.2
°C/W
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
15
mA
(continued)
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
TP3061
1