TP3032 Datasheet, PDF (1/4 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TP3032/D
The RF Line
NPN Silicon
RF Power Transistor
The TP3032 is designed for 26 volts, common emitter, 960 MHz base station
amplifiers, for use in analog and digital systems.
• Specified 26 Volts, 960 MHz Characteristics
Output Power — 21 Watts
Gain — 7.5 dB min
• Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to
Metal Migration
• Class AB Operation
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
TP3032
21 W, 960 MHz
RF POWER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Symbol
VCER
VCBO
VEBO
IC
PD
Value
40
48
3.5
4
52.5
0.3
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
Storage Temperature Range
Operating Junction Temperature
Tstg
– 65 to +150
°C
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1)
Symbol
R_θJC
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 30 mA, RBE = 75 Ω)
V(BR)CER
40
Emitter–Base Breakdown Voltage
(IE = 5 mAdc)
V(BR)EBO
3.5
Collector–Base Breakdown Voltage
(IC = 30 mAdc)
V(BR)CBO
48
Collector–Emitter Leakage
(VCE = 26 V, RBE = 75 Ω)
ICER
—
ON CHARACTERISTICS
DC Current Gain
(IC =1 Adc, VCE = 10 Vdc)
hFE
15
NOTE:
1. Thermal resistance is determined under specified RF operating condition.
CASE 319–07, STYLE 2
Max
3.3
Typ
Max
—
—
—
—
—
—
—
8
Unit
°C/W
Unit
Vdc
Vdc
Vdc
mA
—
80
—
(continued)
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
TP3032
1