TP3024B Datasheet, PDF (1/2 Pages) Motorola, Inc – UHF LINEAR POWER TRANSISTOR

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
UHF Linear Power Transistor
The TP3024B is a balanced transistor designed specifically for use in cellular
radio systems. This device permits the design of a Class AB push–pull, high
gain, broadband amplifier having a high degree of linearity without the need for
complicated biasing circuitry.
• Specified 26 Volts, 960 MHz Characteristics:
Output Power = 35.5 W
Minimum Gain = 7.5 dB
IQtotal _{= 150 mA}
• Push–Pull Configuration
Order this document
by TP3024B/D
TP3024B
35.5 W, 960 MHz
UHF LINEAR POWER
TRANSISTOR
MAXIMUM RATINGS
Rating
Emitter–Base Voltage
Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1)
(TC = 75°C)
Symbol
Value
Unit
VEBO
TJ
Tstg
4.0
Vdc
200
°C
– 65 to + 200 °C
Symbol
R_θJC
Max
Unit
3.0
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA, RBE = 75 Ohms)
V(BR)CER
40
Collector–Emitter Leakage
(VCE = 26 V, RBE = 75 Ohms)
ICER
—
Emitter–Base Breakdown Voltage
(IC = 5.0 mAdc, IC = 0)
V(BR)EBO
3.5
Emitter–Base Leakage
(VBE = 2.5 V)
IEBO
—
ON CHARACTERISTICS (2)
DC Current Gain
(IC = 500 mA, VCE = 10 V)
hFE
15
DYNAMIC CHARACTERISTICS (1)
Output Capacitance
(VCB = 24 V, IE = 0, f = 1.0 MHz)
Cob
—
FUNCTIONAL TESTS (3)
Common–Emitter Amplifier Power Gain
(VCE = 26 V, Pout = 35.5 W, f = 960 MHz, ^IQtotal = 150 mA)
GPE
7.5
Collector Efficiency
η_c
45
(VCE = 26 V, Pout = 35.5 W, f = 960 MHz, ^IQtotal = 150 mA)
NOTE:
1. Thermal resistance is determined under specified RF operating condition.
2. Each transistor chip measured separately.
3. Both transistor chips operating in push–pull amplifier.
CASE 395B–01, STYLE 1
Typ
Max
Unit
—
—
Vdc
—
5.0
mA
—
—
Vdc
—
1.0
mA
—
100
—
17
25
pF
—
—
dB
—
—
%
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
TP3024B
1