TP3022B Datasheet, PDF (1/2 Pages) Motorola, Inc – NPN SILICON UHF POWER TRANSISTOR

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
UHF Power Transistor
The TP3022B is designed for common–emitter operation in the 900 MHz
mobile radio band. Use of gold metallization and silicon diffused ballast
resistors results in a medium power output/driver transistor with state–of–the–
art ruggedness and reliability.
• Specified 26 Volts, 960 MHz Characteristics:
Output Power = 15 Watts
Minimum Gain = 8.5 dB
IQ = 50 mA
• Class AB Operation
Order this document
by TP3022B/D
TP3022B
15 W, 960 MHz
NPN SILICON
UHF POWER
TRANSISTOR
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
29
Vdc
0.167
Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
TJ
200
°C
Tstg
– 65 to +150 °C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (1)
R_θJC
6.0
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS (1)
Collector–Emitter Breakdown Voltage
(IC = 10 mA, RBE = 75 Ohms)
Collector–Emitter Leakage
(VCE = 26 V, RBE = 75 Ohms)
Emitter–Base Breakdown Voltage
(IC = 5.0 mAdc)
Emitter–Base Leakage
(VBE = 2.5 V)
V(BR)CER
40
ICER
—
V(BR)EBO
3.5
IEBO
—
ON CHARACTERISTICS
DC Current Gain
(IC = 500 mA, VCE = 10 V)
hFE
15
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 24 V, IE = 0, f = 1.0 MHz)
Cob
—
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCE = 26 V, Pout = 15 W, f = 960 MHz, IQ = 50 mA)
GPE
8.5
Collector Efficiency
(VCE = 26 V, Pout = 15 W, f = 960 MHz, IQ = 50 mA)
η_c
45
NOTE:
1. Thermal resistance is determined under specified RF operating condition.
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
CASE 319–07, STYLE 2
Typ
Max
Unit
—
—
Vdc
—
5.0
mA
—
—
Vdc
—
1.0
mA
—
100
—
17
25
pF
—
—
dB
—
—
%
TP3022B
1