TP3006 Datasheet, PDF (1/6 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by TP3006/D
The RF Line
NPN Silicon
RF Power Transistor
The TP3006 is designed for cellular radio base station amplifiers up to 960
MHz. It incorporates high value emitter ballast resistors, gold metallizations and
offers a high degree of reliability and ruggedness. The TP3006 also features
input and output matching networks and high impedances. It can easily operate
in a full 870– 960 MHz bandwidth in a simple circuit.
• Class AB Operation
• Specified 26 Volts, 960 MHz Characteristics
Output Power — 5 Watts
Gain — 9 dB min
Efficiency — 45% min
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
TP3006
5 W, 870 – 960 MHz
RF POWER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Current — Continuous
Storage Temperature Range
Operating Junction Temperature
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Symbol
VCER
VCBO
VEBO
IC
Tstg
TJ
PD
Value
45
55
3.5
2
– 40 to +100
200
25
0.14
Unit
Vdc
Vdc
Vdc
Adc
°C
°C
Watts
W/°C
CASE 319–07, STYLE 2
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1)
Symbol
Max
R_θJC
7
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 15 mA, RBE = 75 Ω)
Emitter–Base Breakdown Voltage
(IE = 4 mAdc)
Collector–Base Breakdown Voltage
(IC = 15 mAdc)
Collector–Emitter Leakage
(VCE = 26 V, RBE = 75 Ω)
V(BR)CER
45
—
V(BR)EBO
3.5
—
V(BR)CBO
55
—
ICER
—
—
—
Vdc
—
Vdc
—
Vdc
4
mA
ON CHARACTERISTICS
DC Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc)
hFE
15
—
100
—
NOTE:
(continued)
1. Thermal resistance is determined under specified RF operating condition at temperature test point (see drawing of the package).
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
TP3006
1