TP3005 Datasheet, PDF (1/4 Pages) Motorola, Inc – UHF POWER TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
UHF Power Transistor
The TP3005 is designed for 960 MHz base stations in both analog and digital
applications. It incorporates high value emitter ballast resistors, gold metalliza-
tions and offers a high degree of reliability and ruggedness.
• Specified 26 Volts, 960 MHz Characteristics
Output Power = 4.0 Watts
Minimum Gain = 8.5 dB
Class AB
IQ = 60 mA
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Order this document
by TP3005/D
TP3005
4.0 W, 960 MHz
UHF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
VCER
VCBO
VEBO
IC
PD
Tstg
TJ
Value
40
48
4.0
2.0
25
0.2
– 65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1) at 70°C Case
Symbol
R_θJC
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 15 mA, RBE = 75 Ω)
V(BR)CER
45
Emitter–Base Breakdown Voltage
(IC = 3.0 mAdc)
V(BR)EBO
4.0
Collector–Base Breakdown Voltage
(IE = 15 mAdc)
V(BR)CBO
55
Collector–Emitter Leakage
(VCE = 26 V, RBE = 75 Ω)
ICER
—
ON CHARACTERISTICS
DC Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc)
hFE
15
NOTE:
1. Thermal resistance is determined under specified RF operating condition.
CASE 319–07, STYLE 2
Max
7.0
Typ
Max
—
—
—
—
—
—
—
3.0
Unit
°C/W
Unit
Vdc
Vdc
Vdc
mA
—
100
—
(continued)
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
TP3005
1