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TIP110 Datasheet, PDF (1/6 Pages) Mospec Semiconductor – POWER TRANSISTORS(2.0A,60-100V,50W) | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TIP110/D
Plastic Medium-Power
Complementary Silicon Transistors
. . . designed for generalâpurpose amplifier and lowâspeed switching applications.
⢠High DC Current Gain â
hFE = 2500 (Typ) @ IC = 1.0 Adc
⢠CollectorâEmitter Sustaining Voltage â @ 30 mAdc
VCEO(sus) = 60 Vdc (Min) â TIP110, TIP115
VCEO(sus) = 80 Vdc (Min) â TIP111, TIP116
VCEO(sus) = 100 Vdc (Min) â TIP112, TIP117
⢠Low CollectorâEmitter Saturation Voltage â
VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃà ⢠Monolithic Construction with Builtâin BaseâEmitter Shunt Resistors
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃà ⢠TOâ220AB Compact Package
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ *MAXIMUM RATINGS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Rating
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâBase Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ EmitterâBase Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Collector Current â Continuous
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Peak
Symbol
VCEO
VCB
VEB
IC
TIP110,
TIP115
60
60
TIP111,
TIP116
80
80
5.0
2.0
4.0
TIP112,
TIP117
100
100
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Base Current
IB
50
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Total Power Dissipation @ TC = 25_C
PD
50
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Derate above 25_C
0.4
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Total Power Dissipation @ TA = 25_C
PD
Derate above 25_C
2.0
0.016
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Unclamped Inductive Load Energy â
E
25
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Figure 13
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Operating and Storage Junction
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ THERMAL CHARACTERISTICS
TJ, Tstg
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Characteristics
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Thermal Resistance, Junction to Case
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Thermal Resistance, Junction to Ambient
â 65 to + 150
Symbol
Max
RθJC
2.5
RθJA
62.5
Unit
Vdc
Vdc
Vdc
Adc
mAdc
Watts
W/_C
Watts
W/_C
mJ
_C
Unit
_C/W
_C/W
TA TC
NPN
TIP110
TIP111*
TIP112*
PNP
TIP115
TIP116*
TIP117*
*Motorola Preferred Device
DARLINGTON
2 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 â 80 â 100 VOLTS
50 WATTS
CASE 221Aâ06
TOâ220AB
3.0 60
2.0 40
TC
1.0 20
TA
00
0 20 40 60 80 100 120
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
140 160
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
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