MXR9745T1 Datasheet, PDF (1/4 Pages) Motorola, Inc – 31.5 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
The RF Small Signal Line
Silicon Lateral FET
N–Channel Enhancement–Mode MOSFET
Designed for use in low voltage, moderate power amplifiers such as portable
analog and digital cellular radios and PC RF modems.
• Performance Specifications at 6 Volt, 850 MHz:
Output Power = 31.5 dBm Min
Power Gain = 8.5 dB Typ
Efficiency = 60% Min
• Guaranteed Ruggedness at Load VSWR = 20:1
• Available in Tape and Reel Packaging Options:
T1 Suffix = 1,000 Units per Reel
• MXR9745RT1 is Gate–Drain Pin Out Reversed.
All Electricals Same as MXR9745T1
Order this document
by MXR9745T1/D
MXR9745T1
MXR9745RT1
31.5 dBm, 850 MHz
HIGH FREQUENCY
POWER TRANSISTOR
LDMOS FET
CASE 345–03
(MXR9745RT1, STYLE 8)
(MXR9745T1, STYLE 9)
(SOT–89)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1 MΩ)
Gate–Source Voltage
Drain Current – Continuous
Total Device Dissipation @ TC = 50°C
Derate above 50°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Leakage Current
(VDS = 35 V, VGS = 0)
Gate–Source Leakage Current
(VGS = 5 V, VDS = 0)
IDSS
IGSS
Symbol
VDSS
VDGO
VGS
ID
PD
Tstg
TJ
Symbol
R_θJC
Min
–
–
Value
35
25
± 10
2
10
100
– 65 to +150
150
Max
10
Typ
Max
–
10
–
1
Unit
Vdc
Vdc
Vdc
Adc
W
mW/°C
°C
°C
Unit
°C/W
Unit
µAdc
µAdc
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MXR9745T1 MXR9745RT1
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