MW4IC915NBR1 Datasheet, PDF (1/16 Pages) Motorola, Inc – RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC915MB/GMB wideband integrated circuit is designed for GSM
and GSM EDGE base station applications. It uses Freescale’s newest High
Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi−stage
structure. Its wideband On−Chip design makes it usable from 750 to 1000 MHz.
The linearity performances cover all modulations for cellular applications: GSM,
GSM EDGE, TDMA, N−CDMA and W−CDMA.
Final Application
• Typical Performance: V_DD = 26 Volts, I_DQ1 = 60 mA, I_DQ2 = 240 mA,
P_out = 15 Watts CW, Full Frequency Band (860−960 MHz)
Power Gain — 30 dB
Power Added Efficiency — 44%
Driver Application
• Typical GSM/GSM EDGE Performances: V_DD = 26 Volts, I_DQ1 = 60 mA,
I_DQ2 = 240 mA, P_out = 3 Watts Avg., Full Frequency Band (869−894 MHz
and 921−960 MHz)
Power Gain — 31 dB
Power Added Efficiency — 19%
Spectral Regrowth @ 400 kHz Offset = −65 dBc
Spectral Regrowth @ 600 kHz Offset = −83 dBc
EVM — 1.5%
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 15 Watts CW
Output Power
• Characterized with Series Equivalent Large−Signal Impedance Parameters
• On−Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
• On−Chip Current Mirror g_m Reference FET for Self Biasing Application⁽¹⁾
• Integrated ESD Protection
• N Suffix Indicates Lead−Free Terminations
• 200°C Capable Plastic Package
• Also Available in Gull Wing for Surface Mount
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
V_RD2
V_RG2
V_DS1
RF_in
V_RD1
V_RG1
V_DS2/RF_out
V_GS1
Quiescent Current
V_GS2
Temperature Compensation
Figure 1. Functional Block Diagram
MW4IC915
Rev. 5, 3/2005
MW4IC915NBR1
MW4IC915GNBR1
MW4IC915MBR1
MW4IC915GMBR1
860 − 960 MHz, 15 W, 26 V
GSM/GSM EDGE, N−CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329−09
TO−272 WB−16
PLASTIC
MW4IC915NBR1(MBR1)
CASE 1329A−03
TO−272 WB−16 GULL
PLASTIC
MW4IC915GNBR1(GMBR1)
GND
1
V_RD2
2
V_RG2
3
V_DS1
4
V_RD1
5
RF_in
6
V_RG1
7
V_GS1
8
V_GS2
9
NC 10
GND ₁₁
16 GND
15 NC
14
RF_out/
V_DS2
13 NC
12 GND
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes − AN1987.
© Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
1