MW4IC2230 Datasheet, PDF (1/12 Pages) Motorola, Inc – RF LDMOS Wideband Integrated Power Amplifiers

MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
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by MW4IC2230/D
The Wideband IC Line
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC2230 wideband integrated circuit is designed for W - CDMA base
station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts)
LDMOS IC technology and integrates a multi - stage structure. Its wideband
On - Chip design makes it usable from 1600 to 2400 MHz. The linearity
performances cover all modulations for cellular applications: GSM, GSM
EDGE, TDMA, CDMA and W - CDMA.
Final Application
Typical Single - carrier W - CDMA Performance: V_DD = 28 Volts, I_DQ1 =
60 mA, I_DQ2 = 350 mA, P_out = 5 Watts Avg., f = 2140 MHz, Channel
Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on
CCDF.
Power Gain — 31 dB
Drain Efficiency — 15%
ACPR @ 5 MHz = - 45 dBc @ 3.84 MHz Bandwidth
Driver Application
Typical Single - carrier W - CDMA Performance: V_DD = 28 Volts, I_DQ1 =
60 mA, I_DQ2 = 350 mA, P_out = 0.4 Watts Avg., f = 2140 MHz, Channel
Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 31.5 dB
ACPR @ 5 MHz = - 53.5 dBc @ 3.84 MHz Bandwidth
• Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
• Integrated Temperature Compensation with Enable/Disable Function
• On - Chip Current Mirror g_m Reference FET for Self Biasing Application (1)
• Integrated ESD Protection
• Also Available in Gull Wing for Surface Mount
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
MW4IC2230MBR1
MW4IC2230GMBR1
2110 - 2170 MHz, 30 W, 28 V
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW4IC2230MBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW4IC2230GMBR1
PIN CONNECTIONS
V_RD1
V_RG1
V_DS2
V_DS1
RF_in
V_GS1
V_GS2
V_GS3
3 Stages I_C
Quiescent Current
Temperature Compensation
V_DS3/RF_out
GND
V_DS2
V_RD1
V_RG1
V_DS1
RF_in
V_GS1
V_GS2
V_GS3
GND
1
2
3
16
15
4
5
6
14
7
8
9
10
13
11
12
(Top View)
GND
V_DS3/
RF_out
GND
Functional Block Diagram
NOTE: Exposed backside flag is source
terminal for transistors.
(1) Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1987.
REV 2
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MW4IC2230MBR1 MW4IC2230GMBR1
For More Information On This Product,
Go to: www.freescale.com
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