MW4IC2020MBR1 Datasheet, PDF (1/12 Pages) Motorola, Inc – RF LDMOS Wideband Integrated Power Amplifiers

MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
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by MW4IC2020/D
The Wideband IC Line
RF LDMOS Wideband Integrated
Power Amplifiers
MW4IC2020MBR1
MW4IC2020GMBR1
The MW4IC2020M wideband integrated circuit is designed for base station
applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC
technology and integrates a multi - stage structure. Its wideband On - Chip
design makes it usable from 1600 to 2400 MHz. The linearity performances
cover all modulations for cellular applications: GSM, GSM EDGE, TDMA,
CDMA and W - CDMA.
Final Application
Typical Two - Tone Performance: V_DD = 26 Volts, I_DQ1 = 80 mA, I_DQ2 =
200 mA, I_DQ3 = 300 mA, P_out = 20 Watts PEP, Full Frequency Band
Power Gain — 29 dB
IMD — - 32 dBc
Drain Efficiency — 26% (at 1805 MHz) and 20% (at 1990 MHz)
Driver Applications
Typical GSM EDGE Performance: V_DD = 26 Volts, I_DQ1 = 80 mA, I_DQ2 =
230 mA, I_DQ3 = 230 mA, P_out = 5 Watts Avg., Full Frequency Band
Power Gain — 29 dB
Spectral Regrowth @ 400 kHz Offset = - 66 dBc
Spectral Regrowth @ 600 kHz Offset = - 77 dBc
EVM — 1% rms
Typical CDMA Performance: V_DD = 26 Volts, I_DQ1 = 80 mA, I_DQ2 =
240 mA, I_DQ3 = 250 mA, P_out = 1 Watt Avg., Full Frequency Band, IS - 97
Pilot, Sync, Paging, Traffic Codes 8 through 13
Power Gain — 30 dB
ACPR @ 885 kHz Offset = - 61 dBc @ 30 kHz Bandwidth
ALT1 @ 1.25 MHz Offset = - 69 dBc @ 12.5 kHz Bandwidth
ALT2 @ 2.25 MHz Offset = - 59 dBc @ 1 MHz Bandwidth
• Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 8 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
• Integrated Temperature Compensation with Enable/Disable Function
• On - Chip Current Mirror g_m Reference FET for Self Biasing Application (1)
• Integrated ESD Protection
• Also Available in Gull Wing for Surface Mount
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
1805 - 1990 MHz, 20 W, 26 V
GSM/GSM EDGE, CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW4IC2020MBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW4IC2020GMBR1
PIN CONNECTIONS
V_RD1
V_RG1
V_DS2
V_DS1
RF_in
V_GS1
V_GS2
V_GS3
3 Stages I_C
Quiescent Current
Temperature Compensation
V_DS3/RF_out
GND
V_DS2
V_RD1
V_RG1
V_DS1
RF_in
V_GS1
V_GS2
V_GS3
GND
1
2
3
16
15
4
5
6
14
7
8
9
10
13
11
12
(Top View)
GND
V_DS3/
RF_out
GND
Functional Block Diagram
NOTE: Exposed backside flag is source
terminal for transistors.
(1) Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1987.
REV 4
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MW4IC2020MBR1 MW4IC2020GMBR1
For More Information On This Product,
Go to: www.freescale.com
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