MTY16N80E Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MTY16N80E/D
™ Designer's Data Sheet
TMOS E-FET.™
Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage–blocking capability without
degrading performance over time. In addition, this advanced TMOS
E–FET is designed to withstand high energy in the avalanche and
commutation modes. Designed for high voltage, high speed
switching applications in power supplies, converters and PWM
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas
are critical and offer additional safety margin against unexpected
voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
G
®
D
MTY16N80E
Motorola Preferred Device
TMOS POWER FET
16 AMPERES
800 VOLTS
RDS(on) = 0.50 OHM
S
CASE 340G–02, STYLE 1
TO–264
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
— Non–Repetitive (tp ≤ 10 ms)
VDSS
VDGR
VGS
VGSM
800
Vdc
800
Vdc
± 20
Vdc
± 40
Vpk
Drain Current — Continuous
— Continuous @ TC = 100°C
— Single Pulse (tp ≤ 10 µs)
Total Power Dissipation
Derate above 25°C
ID
16
Adc
ID
11
IDM
55
Apk
PD
300
Watts
2.4
W/°C
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 16 Apk, L = 10 mH, RG = 25 Ω )
TJ, Tstg
– 55 to 150
°C
EAS
mJ
1280
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
R_θJC
R_θJA
0.42
°C/W
30
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
TL
260
°C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
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