MTY14N100E Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MTY14N100E/D
™ Designer's Data Sheet
TMOS E-FET.™
Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high
energy in the avalanche and commutation modes. This new energy
efficient design also offers a drain–to–source diode with fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters, PWM motor controls, and
other inductive loads. The avalanche energy capability is specified to
eliminate the guesswork in designs where inductive loads are
switched and offer additional safety margin against unexpected
voltage transients.
• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
MTY14N100E
Motorola Preferred Device
TMOS POWER FET
14 AMPERES
1000 VOLTS
RDS(on) = 0.80 OHM
®
D
G
S
CASE 340G–02, STYLE 1
TO–264
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
— Single Pulse (tp ≤ 50 µs)
Drain Current — Continuous
— Continuous @ TC = 100°C
— Single Pulse (tp ≤ 10 µs)
Total Power Dissipation
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
1000
1000
± 20
± 40
14
8.7
49
300
2.4
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 14 Apk, L = 10 mH, RG = 25 Ω )
EAS
980
mJ
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
R_θJC
R_θJA
0.42
°C/W
30
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
TL
260
°C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
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